HRW370N10K - N-Channel Trench MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 30 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested April 2016 BVDSS = 100 V RDS(on) typ = 30 Pȍ ID = 25 A D2-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current.

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Published: Jul 18, 2016 |