HRA82N10K - N-Channel MOSFET

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Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 110nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 6.5 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 6.5mΩ ID = 100 A TO-247 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current.

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Published: Mar 26, 2016 |