HRA72N10K - N-Channel MOSFET

SemiHow

Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 150nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 5.5 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 5.5mΩ ID = 140 A TO-247 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current.

📁 HRA72N10K Similar Datasheet

Other Datasheets by SemiHow

Published: Mar 26, 2016 |