HFU6N65U - N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ ȍ ID = 4.8 A D-PAK I-PAK 2 1 3 HFD6N65U 1 2 3 HFU6N65U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol.

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Published: Apr 14, 2017 |