Datasheet Specifications
- Part number
- HFU630
- Manufacturer
- SemiHow
- File Size
- 162.20 KB
- Datasheet
- HFU630-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFD630_HFU630 Dec 2012 HFD630 / HFU630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 7.2 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TestHFU630 Distributors
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