HFU5N70S - N-Channel MOSFET

SemiHow

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N70S 1 2 3 HFU5N70S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dr.

📁 HFU5N70S Similar Datasheet

HFU70N03V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

Other Datasheets by SemiHow

Published: Apr 14, 2017 |