HFU5N60F - 600V N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested Dec 2015 BVDSS = 600 V RDS(on) typ ȍ ID = 5 A D-PAK I-PAK 2 1 3 HFD5N60F 1 2 3 HFU5N60F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol P.

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Published: Jun 27, 2016 |