HFU1N65S - N-Channel MOSFET

SemiHow

Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ. ) @VGS=10V April 2009 BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.9 A D-PAK I-PAK 2 1 3 HFD1N65S 1 2 3 HFU1N65S 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter.

📁 HFU1N65S Similar Datasheet

HFU70N03V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

Other Datasheets by SemiHow

Published: Jun 7, 2015 |