HFU1N60S N-Channel MOSFET

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Description

HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A .

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Datasheet Specifications

Part number: HFU1N60S
Manufacturer: SemiHow
File Size: 692.56 KB
Datasheet: HFU1N60S-SemiHow.pdf
Description: N-Channel MOSFET

Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10 Ω (Typ. ) @VGS=10V  100% Avalanche Teste

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HFU1N60S N-Channel MOSFET SemiHow

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