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HFP2N60S - N-Channel MOSFET

HFP2N60S Description

HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 2.0 A .

HFP2N60S Features

* Originative New Design
* Superior Avalanche Rugged Technology
* Robust Gate Oxide Technology
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Unrivalled Gate Charge : 6.0 nC (Typ. )
* Extended Safe Operating Area
* Lower RDS(ON) ȍ 7S

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Datasheet Details

Part number
HFP2N60S
Manufacturer
SemiHow
File Size
174.26 KB
Datasheet
HFP2N60S-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
SemiHow HFP2N60S-like datasheet