HFH9N90 N-Channel MOSFET

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Description

HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0 A .

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Datasheet Specifications

Part number: HFH9N90
Manufacturer: SemiHow
File Size: 1.12 MB
Datasheet: HFH9N90-SemiHow.pdf
Description: N-Channel MOSFET

Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 55 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.12 Ω (Typ. ) @VGS=10V  100% Avalanche Test

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HFH9N90 N-Channel MOSFET SemiHow

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