HFH18N50S - N-Channel MOSFET

SemiHow

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.220 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

📁 HFH18N50S Similar Datasheet

HFH12N60 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFH20N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFH7N60 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFH9N90 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

Other Datasheets by SemiHow

Published: Jun 7, 2015 |