Datasheet Specifications
- Part number
- HFH6N90
- Manufacturer
- SemiHow
- File Size
- 904.63 KB
- Datasheet
- HFH6N90-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFH6N90 Mar 2010 HFH6N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.95 Ω ID = 6.0 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.95 Ω (Typ. ) @VGS=10V 100% Avalanche TestHFH6N90 Distributors
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