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SML25SCM650N2B Datasheet - Seme LAB

SML25SCM650N2B Silicon Carbide N-Channel Power MOSFET

SILICON CARBIDE N-CHANNEL POWER MOSFET SML25SCM650N2B 650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For High Temperature / Power Efficiency Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain - Source Voltage VGS Gate - Source Voltage ID Continuous Drain Current (1) Tc = 25°C IDM Pulsed Drain Current (2) PD Total Power Dissipation at TJ = 25°C Derate Above 25°C TJ Maximum Junction Temperature Tstg Storage Temperature Range THERMAL PROPERTIES Symb.

SML25SCM650N2B Datasheet (311.59 KB)

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Datasheet Details

Part number:

SML25SCM650N2B

Manufacturer:

Seme LAB

File Size:

311.59 KB

Description:

Silicon carbide n-channel power mosfet.

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SML25SCM650N2B Silicon Carbide N-Channel Power MOSFET Seme LAB

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