IRFF430 Datasheet (Seme LAB) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

IRFF430, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N CHANNEL ENHANCEMENT MODE POWER MOSFET 12.70 (0.500) min.

(00.0.8395)max.

0.41 (0.016) 0.53 (0.021) dia.

5.08 (0.200) typ.

BVDSS ID(cont) RDS(on) 500V 2.5 1.5Ω 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2 13 2.54 (0.100) 45° TO39 Package (TO-205AF) Underside View Pin 1 Source Pin 2 Gate Pin 3 Dra

IRFF430 Features

* AVALANCHE ENERGY RATED

* HERMETICALLY SEALED

* DYNAMIC dv/dt RATING

* SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate

* Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 2.5A I