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BFY90 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Description

The BFY90 is a low noise transistor intended for use in broad and narrow-band amplifiers up to 1GHz.

2.54 (0.100) Nom.

Emitter Pin 2 Base Pin 3 Collector Pin 4 Connected to Case ABSOLUTE MAXIMUM RATINGS VCBO VCER VCEO VEBO IC(AV) ICM Ptot

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Datasheet Details

Part number BFY90
Manufacturer Seme LAB
File Size 17.77 KB
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet download datasheet BFY90 Datasheet
Additional preview pages of the BFY90 datasheet.

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Full PDF Text Transcription

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BFY90 MECHANICAL DATA Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. DESCRIPTION The BFY90 is a low noise transistor intended for use in broad and narrow-band amplifiers up to 1GHz. 2.54 (0.100) Nom. 4 3 2 1 TO72 Pin 1 – Emitter Pin 2 –Base Pin 3 – Collector Pin 4 – Connected to Case ABSOLUTE MAXIMUM RATINGS VCBO VCER VCEO VEBO IC(AV) ICM Ptot Tj Tstg, Collector – Base Voltage (TA= 25°C unless otherwise stated) 30V 30V 15V 2.
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