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STT3599C MOSFET

STT3599C Description

Elektronische Bauelemente STT3599C (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET RoH.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

STT3599C Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe TSOP-6 saves board space.
* Fast switching speed.
* High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 30 -30 RDS(on) ( 0.063@VGS= 10V 0.090@VGS=

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Datasheet Details

Part number
STT3599C
Manufacturer
SeCoS
File Size
317.40 KB
Datasheet
STT3599C-SeCoS.pdf
Description
MOSFET

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