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SSPRDJ6560-C Dual-Channel MOSFET

SSPRDJ6560-C Description

Elektronische Bauelemente SSPRDJ6560-C N-Ch: 6.8A, 60V, RDS(ON) 45mΩ P-Ch: -5.1A, -60V, RDS(ON) 82mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Com.
The SSPRDJ6560-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate char.

SSPRDJ6560-C Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J6560 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch DFN3x3-8DJ REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.15 BSC 0.935 1.135 1

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Datasheet Details

Part number
SSPRDJ6560-C
Manufacturer
SeCoS
File Size
503.77 KB
Datasheet
SSPRDJ6560-C-SeCoS.pdf
Description
Dual-Channel MOSFET

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Dual-Channel MOSFET SeCoS
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