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SSG4362N N-Ch Enhancement Mode Power MOSFET

SSG4362N Description

Elektronische Bauelemente SSG4362N 18.6 A, 30 V, RDS(ON) 6 mī—ī€  N-Ch Enhancement Mode Power MOSFET .
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

SSG4362N Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe SOP-8 saves board space.
* Fast switching speed.
* High performance trench technology. PACKAGE INFORMATION Package MPQ SOP-8 2.5K LeaderSize 13’ inch MAXIMUM RATINGS (TA

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Datasheet Details

Part number
SSG4362N
Manufacturer
SeCoS
File Size
504.98 KB
Datasheet
SSG4362N-SeCoS.pdf
Description
N-Ch Enhancement Mode Power MOSFET

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N-Ch Enhancement Mode Power MOSFET SeCoS
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