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SSG4530C N & P-Ch Enhancement Mode Power MOSFET

SSG4530C Description

SSG4530C Elektronische Bauelemente N-Ch: 5.3A, 30V, RDS(ON) 82 mΩ P-Ch: -5.2A, -30V, RDS(ON) 80 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compli.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

SSG4530C Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology A C N J H G Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. K F E REF. A B

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Datasheet Details

Part number
SSG4530C
Manufacturer
SeCoS Halbleitertechnologie
File Size
744.38 KB
Datasheet
SSG4530C-SeCoSHalbleitertechnologie.pdf
Description
N & P-Ch Enhancement Mode Power MOSFET

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P-Ch Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie
SeCoS Halbleitertechnologie SSG4530C-like datasheet