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SGM2310A - N-Channel MOSFET

Description

The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SGM2310A is universally used for all commercial-industrial applications.

Features

  • Simple drive requirement Super high density cell design for extremely low RDS(ON).

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Datasheet Details

Part number SGM2310A
Manufacturer SeCoS
File Size 0.98 MB
Description N-Channel MOSFET
Datasheet download datasheet SGM2310A Datasheet

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Other Datasheets by SeCoS

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SGM2310A 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2310A is universally used for all commercial-industrial applications. FEATURES Simple drive requirement Super high density cell design for extremely low RDS(ON) MARKING D 24 A Top View C B KL E 123 D F GH 4 J REF. A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 REF. G H J K L Millimeter Min. Max. -0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF.
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