C4003
Features
- High breakdown voltage.
- Adoption of MBIT process.
- Excellent h FE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
Tj Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
VCB=300V, IE=0
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
DC Current Gain h FE VCE=10V, IC=50m A
Gain-Bandwidth Product f T VCE=30V, IC=10m A
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=50m A, IB=5m A
Base-to-Emitter Saturation Voltage
VBE(sat) IC=50m A, IB=5m A
Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage
V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1m A, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
- : The 2SC4003 is classified by 50m A h...
