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C3790 - 2SC3790

Features

  • High breakdown voltage (VCEO≥300V).
  • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP).
  • Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.7 ( ) : 2SA1480 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3792 2SC3792
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C3708 2SC3708
C3749 2SC3749
C3750 2SC3750

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.