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C3576 2SC3576

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Description

Ordering number:EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications .

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Datasheet Specifications

Part number
C3576
Manufacturer
Sanyo
File Size
106.51 KB
Datasheet
C3576-Sanyo.pdf
Description
2SC3576

Features

* Adoption of FBET process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2033 [2SC3576] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base

Applications

* Applications

C3576 Distributors

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