PCP1202 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	PCP1202
Manufacturer	Sanyo Semicon Device
File Size	112.02 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	PCP1202_SanyoSemiconDevice.pdf

Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.

📁 PCP1202 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Jan 9, 2012 |