PCP1201 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	PCP1201
Manufacturer	Sanyo Semicon Device
File Size	111.87 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	PCP1201_SanyoSemiconDevice.pdf

Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.

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Published: Jan 9, 2012 |