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C5888 - 2SC5888

Features

  • es Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications ( ) : 2SA2099 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications • Package Dimensions unit : mm 2041A [2SA2099 / 2SC5888] 10.0 3.2 4.5 2.8 Relay drivers, lamp drivers, motor drivers. www.DataSheet4U.com • • • • Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.
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