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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5886
High-Speed Swtching Applications DC-DC Converter Applications
2SC5886
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 55 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEX VCEO VEBO
IC ICP IB
PC
Tj Tstg
100
V
80 V
50
7
V
5 A
10
0.5
A
1 W
20
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.
C5886 Datasheet
