30A01SP - PNP Transistor

Sanyo Semicon Device

Datasheet Details

0.6 0.4 15.0 1.8 Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Small ON-resistance (Ron). 0.4 0.5 0.4 1 2 1.3 0.7 3 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEB.

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Published: Dec 3, 2006 |