30A01S - PNP Transistor

Sanyo Semicon Device

Datasheet Details

Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 0.8 0.4 1.6 3 0 to 0.1 1 2 0.5 0.5 1.6 0.2 0.1 1 : Base 2 : Emitter 3 : Collector Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector C.

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Published: Dec 3, 2006 |