2SK2395 - N-Channel Junction Silicon FET

Sanyo Semicon Device

Datasheet Details

Part number	2SK2395
Manufacturer	Sanyo Semicon Device
File Size	94.48 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK2395_SanyoSemiconDevice.pdf

Large | yfs |.
Small Ciss.
Ultralow noise figure. Package Dimensions unit:mm 2034A [2SK2395] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 3.0 3.8nom Conditions Parameter Symbo.

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Published: Mar 30, 2005 |