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2SK2316 - N-Channel Silicon MOSFET

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • Low-voltage drive (2.5V drive). Package Dimensions unit: mm 2062A-PCP [2SK2316] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Conditions Ratings 20 ±10 2 8 1.5 3.5 150.
  • 55 to +150 1 : Gate 2 : Drain 3 : Source SANYO: PCP (Bottom View) PW≤10µd, duty cycle.

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Full PDF Text Transcription

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Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive (2.5V drive). Package Dimensions unit: mm 2062A-PCP [2SK2316] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Conditions Ratings 20 ±10 2 8 1.5 3.5 150 –55 to +150 1 : Gate 2 : Drain 3 : Source SANYO: PCP (Bottom View) PW≤10µd, duty cycle≤1% Mounted on ceramic board (250mm2×0.
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