2SD2712 - NPN Triple Diffused Planar Silicon Darlington Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SD2712
Manufacturer	Sanyo Semicon Device
File Size	64.12 KB
Description	NPN Triple Diffused Planar Silicon Darlington Transistor
Datasheet	2SD2712_SanyoSemiconDevice.pdf

High DC current gain. Wide ASO. Low saturation voltage. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage www. DataSheet4U. com Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 180 160 6 10 16 2.5 110 150 --55 to +150 Unit V V V A A W W °C °C Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Tem.

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Published: Jul 23, 2007 |