2SD2701 - Transistors

Datasheet Details

1) A collector current is large. 2) VCE(sat) ≦ 350mV At IC = 1A / IB = 50mA 0.2 1.7 2.1 0.2 0.17 0~0.1 0.15Max. 0.77 0.65 0.65 1.3 ROHM : TUMT3 Abbreviated symbol : FZ (1) Base (2) Emitter (3) Collector zAbsolute maximum ratings (Ta=25°C) www. DataSheet4U. com zPackaging specifications Unit V V V A A ∗1 W °C °C Package Type Code Basic ordering unit (pieces) 2SD2701 Taping TL 3000 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power d.

📁 2SD2701 Similar Datasheet

2SD2704K - Transistor (ROHM)
2SD2712 - NPN Triple Diffused Planar Silicon Darlington Transistor (Sanyo Semicon Device)
2SD2720 - NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD200 - NPN Transistor (INCHANGE)
2SD2000 - Silicon NPN Transistor (Panasonic Semiconductor)
2SD2001 - NPN Transistor (INCHANGE)
2SD2005 - NPN Transistor (ROHM)
2SD2009 - NPN Transistor (ROHM)

Other Datasheets by Rohm

Published: Jul 23, 2007 |