2SD2658LS Datasheet - Sanyo Semicon Device

2SD2658LS NPN Triple Diffused Planar Silicon Transistor

2SD2658LS Features

* High speed.

* High breakdown voltage (VCBO=1500V).

* High reliability (Adoption of HVP process).

* Adoption of MBIT process.

* On-chip damper diode. Package Dimensions unit : mm 2079D [2SD2658LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1

Datasheet Details

2SD2658LS

Sanyo Semicon Device

30.79 KB

Npn triple diffused planar silicon transistor.

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