2SD2658LS - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SD2658LS
Manufacturer	Sanyo Semicon Device
File Size	30.79 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SD2658LS_SanyoSemiconDevice.pdf

High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode. Package Dimensions unit : mm 2079D [2SD2658LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 Specifications Absolute Maximum Ratings at Ta=25°C 123 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Parameter Collector-to-Base Voltage Collector-to-Emi.

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Published: Apr 16, 2005 |