2SD2579 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SD2579
Manufacturer	Sanyo Semicon Device
File Size	43.32 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SD2579_SanyoSemiconDevice.pdf

High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SD2579] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 2.8 2.0 4.0 2.0 20.4 1.0 0.6 1 2 3 2.0 1:Base 2:Collector 3:Emitter SANYO:TO3PML 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current.

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Published: Apr 3, 2005 |