2SD2573 Datasheet (Panasonic Semiconductor) - Silicon NPN triple diffusion planar type Transistor

2SD2573, Silicon NPN triple diffusion planar type Transistor

Power Transistors 2SD2573 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high current amplification, power amplification 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation TC = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Ts

2SD2573 Features

* 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package

* Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open)