2SC6022 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC6022
Manufacturer	Sanyo Semicon Device
File Size	73.27 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC6022_SanyoSemiconDevice.pdf

Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Tempera.

📁 2SC6022 Similar Datasheet

2SC6026 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC6026CT - Silicon NPN Transistor (Toshiba)
2SC6026MFV - Silicon NPN Transistor (Toshiba Semiconductor)
2SC6000 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC6010 - Silicon NPN Transistor (Toshiba)
2SC6011 - NPN Transistor (INCHANGE)
2SC6011A - PNP PowerTransistor (Sanken)
2SC6012 - Silicon NPN triple diffusion Power Transistor (Panasonic Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Sep 9, 2008 |