2SC5887 - NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC5887
Manufacturer	Sanyo Semicon Device
File Size	37.67 KB
Description	NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC5887_SanyoSemiconDevice.pdf

18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specifications ( ) : 2SA2098 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Stora.

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Published: Jan 20, 2006 |