2SC4563 - PNP Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC4563
Manufacturer	Sanyo Semicon Device
File Size	83.40 KB
Description	PNP Epitaxial Planar Silicon Transistor
Datasheet	2SC4563_SanyoSemiconDevice.pdf

High fT : fT=1.2GHz typ.
High breakdown voltage : VCEO≥80V.
High current : IC=500mA.
Small reverse transfer capacitance : Cre=3.8pF (VCB=30V).
Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Col.

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Published: Apr 3, 2005 |