2SC4365 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC4365
Manufacturer	Sanyo Semicon Device
File Size	145.39 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC4365_SanyoSemiconDevice.pdf

Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA) Package Dimensions unit:mm 2018B [2SC4365] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical.

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Published: Mar 22, 2005 |