The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4301 900 800 7 7(Pulse14) 3.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–1A VCB=10V, f=1MHz
(Ta=25°C) 2SC4301 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ V V MHz pF Unit
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
µA
V
23.0±0.3 9.5±0.2
µA
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.
2SC4301 Datasheet
