2SC3495 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3495
Manufacturer	Sanyo Semicon Device
File Size	89.67 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3495_SanyoSemiconDevice.pdf

Adoption of FBET process.
High DC current gain (hFE=500 to 2000).
High breakdown voltage (VCEO≥100V).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
Small Cob (Cob=1.8pF typ). Package Dimensions unit:mm 2003A [2SC3495] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current.

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Published: Mar 22, 2005 |