2SC3417 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC3417
Manufacturer	Sanyo Semicon Device
File Size	64.61 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3417_SanyoSemiconDevice.pdf

High breakdown voltage : VCEO≤300V.
Excellent high frequency characteristics : Cre=1.8pF(typ).
Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj.

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Published: Mar 22, 2005 |