2SC3392 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC3392
Manufacturer	Sanyo Semicon Device
File Size	153.41 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3392_SanyoSemiconDevice.pdf

Adoption of FBET process.
High breakdown voltage : VCEO=(.
)50V.
Large current capacitiy and high fT.
Very small-sized package permitting sets to be small- sized, slim. Package Dimensions unit:mm 2018A [2SA1338/2SC3392] Switching Time Test Circuit ( ) : 2SA1338 (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Ba.

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Published: Mar 22, 2005 |