2SC3332 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC3332
Manufacturer	Sanyo Semicon Device
File Size	130.84 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3332_SanyoSemiconDevice.pdf

Hgih breakdown voltage.
Excellent hFE linearity.
Wide ASO and highly resistant to breakdown.
Adoption of MBIT process. Package Dimensions unit:mm 2003A [2SA1319/2SC3332] Switching Test Circuit (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) ( ) : 2SA1319 JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collector E : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volt.

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Published: Mar 22, 2005 |