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2SC3336
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1. Base 2. Collector (Flange) 3. Emitter
1
2
3
2SC3336
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg
1
Ratings 500 400 10 15 25 7.5 100 150 –55 to +150
Unit V V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ — — Max — — Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 mH I C = 15 A, IB1 = 3.
2SC3336 Datasheet
