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2SB886 - PNP Transistor

Sanyo Semicon Device

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Datasheet Details

Part number	2SB886
Manufacturer	Sanyo Semicon Device
File Size	136.96 KB
Description	PNP Transistor
Datasheet	2SB886_SanyoSemiconDevice.pdf

2SB886 Product details

Features

High DC current gain.
High current capacity and wide ASO.
Low saturation voltage. Package Dimensions unit:mm 2010C [2SB886/2SD1196] ( ) : 2SB886 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C.

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Other Datasheets by Sanyo Semicon Device

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Published: Mar 22, 2005 |