2SB632 - PNP/NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SB632
Manufacturer	Sanyo Semicon Device
File Size	363.58 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistor
Datasheet	2SB632_SanyoSemiconDevice.pdf

High collector dissipation and wide ASO. Package Dimensions unit:mm 2009B [2SB632, 632K/2SD612, 612K] ( ) : 2SB632, 632K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 2SB632, D612 (.
)25.

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Published: Mar 22, 2005 |