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2SB608 - PNP Transistor

Description

Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB608 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.
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